Inverse Magnetoresistance Characteristic of Hybrid-Type Multilayer Structure of IrMn-Based Giant-Magnetoresistance Spin Valve and High-Tc Superconductor YBa2Cu3O7−x Film
| Autor: | Sang-Suk Lee, Jong-Gu Choi, Woo-Il Yang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Superconductivity Materials science Condensed matter physics Magnetoresistance Spin valve Giant magnetoresistance 02 engineering and technology Coercivity 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Exchange bias 0103 physical sciences Materials Chemistry Equivalent circuit Electrical and Electronic Engineering 0210 nano-technology Quantum tunnelling |
| Zdroj: | Journal of Electronic Materials. 48:1486-1491 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-018-6659-x |
| Popis: | An antiferromagnetic-IrMn-based giant-magnetoresistance spin-valve (GMR-SV) multilayer on a high-temperature superconductor YBa2Cu3O7−x (YBCO) film was prepared using an ion-beam deposition system. The exchange bias coupling field (Hex), coercivity (HC), and magnetoresistance ratio (MR (%)) of the hybrid YBCO/GMR-SV multilayer structure were measured and compared at room temperature and 77 K. The MR ratio (%) of the hybrid YBCO/GMR-SV structure measured by the four-probe method at 77 K was − 9.3%, different from that of the conventional GMR-SV structure. The phenomenon of a negative MR (%) below the critical temperature (Tc) can be explained by the current-in-plane tunneling effect, when the resistance of the middle gap (G) layer between the high-temperature superconductor YBCO and GMR-SV multilayer reaches a value comparable to the plane resistance of the upper metal layer. In order to analyze the inversed MR (%) of the hybrid YBCO/GMR-SV multilayer structure, the equivalent circuit for each layer was constructed and an equation of the output voltage was derived. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink