Dislocation assisted diffusion: A mechanism for growth of intermetallic compounds in copper ball bonds
| Autor: | Siavash Soltani, Panthea Sepehrband, Maryam Gholamirad |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Intermetallic chemistry.chemical_element 02 engineering and technology 01 natural sciences Condensed Matter::Materials Science Molecular dynamics Aluminium Ball bonding 0103 physical sciences Electrical and Electronic Engineering Composite material Safety Risk Reliability and Quality 010302 applied physics 021001 nanoscience & nanotechnology Condensed Matter Physics Copper Atomic and Molecular Physics and Optics Finite element method Computer Science::Other Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Ball (bearing) Dislocation 0210 nano-technology |
| Zdroj: | Microelectronics Reliability. 81:210-217 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2017.12.038 |
| Popis: | A combination of Finite Element Analysis (FEA), Molecular Dynamics (MD) simulation and analytical formulation is employed to predict the thickness of Intermetallic Compounds (IMCs) right after ball bonding of copper wire to an aluminum pad. The IMCs growth is related to the enhanced diffusion through the dislocations that are generated in the aluminum pad during the bonding process. Dislocation density and diffusional constants are estimated from the results of the FEA and MD simulation and used to calculate the thickness of IMCs that can form through dislocation-assisted diffusion. It is shown that dislocations have a strong effect on controlling diffusional processes that lead to IMC growth. Results are compared with independently acquired experimental data in the literature. The good agreement between the computed and experimental results supports the validity of the proposed mechanism. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect