The effect of temperature on the electrical characterization of a poly(phenoxy-imine)/p-silicon heterojunction
| Autor: | Yılmaz Şahin, Murat Acar, Kadem Meral, Hacı Ökkeş Demir, Zakir Çaldıran, Sakir Aydogan |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Polymers and Plastics General Chemical Engineering Imine 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Characterization (materials science) chemistry.chemical_compound chemistry Chemical engineering Silicon heterojunction Physical and Theoretical Chemistry 0210 nano-technology |
| Zdroj: | e-Polymers. 16:75-82 |
| ISSN: | 1618-7229 2197-4586 |
| DOI: | 10.1515/epoly-2015-0170 |
| Popis: | A poly(phenoxy-imine)/p-silicon rectifying device was fabricated and the current-voltage characteristics of the device were examined as a function of temperature in the 40–300 K range. The temperature dependence of the main parameters, namely, the barrier height (Φb), ideality factor (η), reverse current (I0) and series resistance (Rs), were investigated. It was seen that the Φb and the I0 values of the device increased with increasing temperature, while the η and the Rs values decreased. The temperature dependences of the Φb and the η were interpreted by the assumption of a Gaussian distribution of the barrier heights arising from barrier inhomogeneities that prevailed at the interface of the poly(phenoxyimine)/p-silicon. From ln(I0/T2) vs. 1/ηT plot, the values of the activation energy (Ea) and Richardson constant (A*) were calculated as 0.324 eV and 2.84×10-7 A cm-2K-2, respectively. The experimental value of the Rs from the forward current-voltage plots decreased with an increase in the temperature. |
| Databáze: | OpenAIRE |
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