Avalanche breakdown-related electroluminescence in single crystal Si:Er:O

Autor:	K.F. Shtel'makh, Nikolai A. Sobolev, A. M. Emel’yanov
Rok vydání:	1997
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Annealing (metallurgy) chemistry.chemical_element Electroluminescence Atmospheric temperature range Avalanche breakdown law.invention chemistry law Optoelectronics business Single crystal Light-emitting diode Diode
Zdroj:	Applied Physics Letters. 71:1930-1932
ISSN:	1077-3118 0003-6951
Popis:	Er3+-related electroluminescence (EL) at ∼1.54 μm from single-crystal silicon light-emitting diodes fabricated by erbium and oxygen co-implantation and subsequent annealing has been observed in the avalanche breakdown regime in the 80–300 K temperature range. The EL intensity decreased by a factor of 2 with a temperature increase from 80 to 300 K. The room-temperature yield under the reverse bias was over one order of magnitude higher than that under the forward bias.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::32f871ee044d3ba689fc0affe27fb0a1 https://doi.org/10.1063/1.119984 Zobrazit plný text záznamu