Energy spectra of electron yields from silicon: Theory and experiment
| Autor: | Z. Chaoui, Zijing Ding, K. Goto |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Physics
Range (particle radiation) Auger electron spectroscopy Reflection high-energy electron diffraction Auger effect Astrophysics::High Energy Astrophysical Phenomena Electron energy loss spectroscopy Energy-dispersive X-ray spectroscopy General Physics and Astronomy Secondary electrons symbols.namesake Secondary emission symbols Atomic physics |
| Zdroj: | Physics Letters A. 373:1679-1682 |
| ISSN: | 0375-9601 |
| DOI: | 10.1016/j.physleta.2009.02.069 |
| Popis: | In order to simulate the energy deposited of low energy electrons in a solid state silicon detector, a detailed Monte Carlo technique has been applied to describe electron scattering processes from silicon in the keV and sub-keV electron energy range. However, the precision on the energy deposited depends strongly on the accuracy of the energy of the total backscattered electrons. Thus, accurate models are needed to simulate the energy spectra of primary, secondary and Auger electron yields. In the present Letter, we show that the inclusion of ionizations, excitations, secondary electron generation, relaxations and Auger emissions provide a better description of the experimental measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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