Post-focus expansion of ion beams for low fluence and large area MeV ion irradiation: Application to human brain tissue and electronics devices
| Autor: | Harry J. Whitlow, Patrick Jeanneret, Joy Roth, Adrien Roux, Alexandra Homsy, Edouard Guibert, Luc Stoppini, Sven Krause, Emmanuel Eggermann |
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| Rok vydání: | 2017 |
| Předmět: |
0301 basic medicine
Nuclear and High Energy Physics Materials science Proton business.industry Transistor Bipolar junction transistor Radiochemistry Microbeam law.invention Ion Threshold voltage 03 medical and health sciences 030104 developmental biology 0302 clinical medicine law MOSFET Optoelectronics Irradiation business Instrumentation 030217 neurology & neurosurgery |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 404:87-91 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2017.01.054 |
| Popis: | Irradiation with ∼3 MeV proton fluences of 106–109 protons cm−2 have been applied to study the effects on human brain tissue corresponding to single-cell irradiation doses and doses received by electronic components in low-Earth orbit. The low fluence irradiations were carried out using a proton microbeam with the post-focus expansion of the beam; a method developed by the group of Breese [1] . It was found from electrophysiological measurements that the mean neuronal frequency of human brain tissue decreased to zero as the dose increased to 0–1050 Gy. Enhancement-mode MOSFET transistors exhibited a 10% reduction in threshold voltage for 2.7 MeV proton doses of 10 Gy while a NPN bipolar transistor required ∼800 Gy to reduce the h fe by 10%, which is consistent the expected values. |
| Databáze: | OpenAIRE |
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