| Autor: |
Theodorus E. Standaert, Veeraraghavan S. Basker, Sivananda K. Kanakasabapathy, M.V. Khare, Jeffrey B. Johnson, C.-C. Yeh, J. Iacoponi, Balasubramanian S. Haran, Vimal Kamineni, Neeraj Tripathi, H. Bu, Tenko Yamashita, Andres Bryant, Abhijeet Paul, T. Hook, Johnathan E. Faltermeier, Jin Cho, Gen Tsutsui |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE International Electron Devices Meeting. |
| Popis: |
A first time rigorous experimental study of effective current (Ieff) variability in high-volume manufacturable (HVM) 14nm Silicon-On-Insulator (SOI) FINFETs is reported which identifies, threshold voltage (Vtlin), external resistance (Rext), and channel trans-conductance (Gm) as three independent sources of variation. The variability in Gm, Vtlin (AVT=1.4(n)/0.7(p) mV-μm), and Ieff exhibit a linear Pelgrom fit indicating local variations, along with non-zero intercept which suggests the presence of global variations at the wafer level. Relative contribution of Gm to Ieff variability is dominant in FINFETs with small number of fins (Nfin); however, both Gm and Rext variations dominate in large Nfin devices. Relative contribution of Vtlin remains almost independent of Nfin. Both n and p FINFETs show the above mentioned trends. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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