Analysis of Schottky Diode Detector Circuit Based on Multiphysics Simulation
| Autor: | Zeng Hongzheng, Xu Ke, Cheng Xing |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Multiphysics Detector Schottky diode Semiconductor device Computer Science::Hardware Architecture Nonlinear system Computer Science::Emerging Technologies Semiconductor Hardware_INTEGRATEDCIRCUITS Electronic engineering Equivalent circuit business Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT). |
| DOI: | 10.1109/icmmt.2018.8563979 |
| Popis: | Nonlinear characteristics of semiconductor devices play a key role in the performances of circuits, however, their modelling is still a big challenge in circuit simulations nowadays, especially in a large signal condition, where physical processes dominate the device operation, the equivalent circuit model-based simulation may lose accuracy. A detector circuit of HSMS-282 Schottky diode is taken as a sample, according to circuit simulation method based on semiconductor physics and thermodynamic equations. Its large-signal nonlinear characteristic and temperature effect are simulated and analyzed. Moreover, useful physical mechanism for understanding on semiconductor devices and circuits are revealed. |
| Databáze: | OpenAIRE |
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