| Autor: | A. P. Kokhanenko, Sergey N. Nesmelov, A. V. Voitsekhovskii, N. V. Komarov, S. I. Lyapunov |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors business.industry Schottky barrier Doping General Physics and Astronomy chemistry.chemical_element Schottky diode Epitaxy Condensed Matter::Materials Science chemistry.chemical_compound Platinum silicide chemistry Condensed Matter::Superconductivity Silicide Optoelectronics Surface layer business |
| Zdroj: | Russian Physics Journal. 44:794-805 |
| ISSN: | 1064-8887 |
| DOI: | 10.1023/a:1013691432540 |
| Popis: | The spectral characteristic of infrared silicon–platinum silicide Schottky barrier photodetectors is shifted to the long wavelength region due to a highly-doped surface silicon layer produced by recoil boron implantation. The dependence of the resulting highly-doped layer parameters on high-energy boron-ion implantation regimes is studied experimentally. Energy-band diagrams and reduction of the barrier height are calculated for p-Si–PtSi structures with highly-doped surface layers produced by molecular-beam epitaxy and recoil implantation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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