Interfacial magnetism in stressed semiconductors with antiferromagnetic ordering
| Autor: | V. G. Kantser, N. M. Malkova |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Solid-state physics Condensed matter physics business.industry Magnetism Fermi level Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Semiconductor symbols Antiferromagnetism Condensed Matter::Strongly Correlated Electrons business Spin (physics) |
| Zdroj: | Physics of the Solid State. 39:1150-1153 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/1.1130034 |
| Popis: | Stressed heterojunctions with antiferromagnetic ordering, in which the primary semiconductors have mutually inverted band spectra, are investigated. It is shown that the interface-bound states formed in these heterojunctions are split with respect to spin. As a result, if the Fermi level falls within one of the bands of the interface states, magnetic ordering is induced in the plane of the interface, i.e., the interfacial magnetism phenomenon can be observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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