Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons
| Autor: | Nicholas W. M. Ritchie, Nicholas K. Eib, David F. Kyser |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Photon Materials science Mechanical Engineering Extreme ultraviolet lithography 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Resist Extreme ultraviolet Physics::Space Physics 0103 physical sciences Cathode ray Astrophysics::Solar and Stellar Astrophysics Astrophysics::Earth and Planetary Astrophysics Electrical and Electronic Engineering Atomic physics 0210 nano-technology Absorption (electromagnetic radiation) Electron-beam lithography |
| Zdroj: | Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:033507 |
| ISSN: | 1932-5150 |
| Popis: | The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert–Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems. |
| Databáze: | OpenAIRE |
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