Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
| Autor: | N. I. Iakovleva |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Range (particle radiation) Radiation Materials science Dopant business.industry 020206 networking & telecommunications 02 engineering and technology Condensed Matter Physics 01 natural sciences Molecular physics Electronic Optical and Magnetic Materials Photodiode law.invention Semiconductor law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Quantum efficiency Charge carrier Electrical and Electronic Engineering Diffusion (business) business Recombination |
| Zdroj: | Journal of Communications Technology and Electronics. 64:330-333 |
| ISSN: | 1555-6557 1064-2269 |
| DOI: | 10.1134/s1064226919030215 |
| Popis: | The surface recombination rates for p-type HgCdTe layers with different dopant concentrations and trap densities Nt are calculated. It is shown that, at the given initial parameters, the surface recombination rate Smax lies in the range of 10–104 cm/s. The current sensitivity for p-type HgCdTe is simulated using the dependence of quantum efficiency in the approximation of large lifetimes τn0 and large diffusion lengths Ln of minority charge carriers, taking into account the effect of the surface recombination rate. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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