Photoluminescence and secondary ion mass spectroscopy characterization of GaAs–AlGaAs quantum wells grown on GaAs (100) substrates with different surface treatments

Autor:	V.M. Sánchez-Reséndiz, A. Guillén-Cervantes, Máximo López-López, Z. Rivera-Alvarez, I. Koudriavtsev
Rok vydání:	2009
Předmět:	Photoluminescence Chemistry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy Surfaces Coatings and Films Barrier layer Layer (electronics) Carbon Quartz Quantum well Molecular beam epitaxy
Zdroj:	Applied Surface Science. 255:4742-4746
ISSN:	0169-4332
DOI:	10.1016/j.apsusc.2008.09.002
Popis:	GaAs (1 0 0) substrates prepared in a quartz chamber under a H2/As4 flux, and then exposed to air were used for the subsequent growth of GaAs–AlGaAs single quantum wells by molecular beam epitaxy. The substrates prepared by this method showed atomically flat surfaces corroborated by atomic force microscopy analysis. Quantum wells grown directly on these substrates without a GaAs buffer layer exhibited narrow and intense photoluminescence peaks, an indication of a high quality material. The secondary ion mass spectroscopy analysis showed oxygen and carbon traces on the first AlGaAs barrier layer grown after air exposure with no effects on the quantum wells optical emissions. From the results we conclude that the prepared GaAs surfaces are useful for the epitaxial growth of high quality quantum structures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::32c89e95035f9a6bbd4938fe409f8b05 https://doi.org/10.1016/j.apsusc.2008.09.002 Zobrazit plný text záznamu Full Text from ScienceDirect