Mechanisms of dark conductivity and photosensitivity in PbSe polycrystalline films on glass and Si substrates
| Autor: | N. O. Tashtanbajev, V. B. Orletskii, Fiodor F. Sizov, Vladimir V. Tetyorkin, Alexandr G. Stepanushkin |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Silicon business.industry General Engineering Analytical chemistry chemistry.chemical_element Conductivity Atomic and Molecular Physics and Optics Semiconductor chemistry Hall effect Electrical resistivity and conductivity Optoelectronics Grain boundary Crystallite Thin film business |
| Zdroj: | Optical Engineering. 33:1450 |
| ISSN: | 0091-3286 |
| DOI: | 10.1117/12.167103 |
| Popis: | Temperature dependencies of dark electrical characteristics (Hall effect and conductivity) are investigated in PbSe polycrystalline films with different crystallite sizes deposited on glass and Si substrates. In these films the spectral dependencies of photoelectrical characteristics and the lifetime of photoexcited carriers on the crystallite sizes are studied. It is shown that the experimental data may be explained by the existence of the potential barriers for the majority carriers (holes ) at the grain boundaries. The height of the barriers is found to depend on the crystallite sizes. PbSe photosensitive structures with detectivity D[sup [star]][sub [lambda]] = 2 [times] 10[sup 10] cm Hz[sup [1/2]]/W at room temperature are fabricated on glass substrates. On Si substrates, the detectivity values of PbSe polycrystalline photodetectors were an order lower. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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