Antimony doping of ZnTe grown by molecular beam epitaxy

Autor:	R.C. Spitzer, G. P. Schwartz, R. D. Feldman, G.J. Gualtieri, Timothy D. Harris, A. Sher, R. F. Austin, A.B. Emerson, M. Schnoes, S.W. Downey
Rok vydání:	1992
Předmět:	Dopant Chemistry Vapor pressure Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Inorganic Chemistry Secondary ion mass spectrometry Antimony Materials Chemistry Thin film Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 118:295-298
ISSN:	0022-0248
DOI:	10.1016/0022-0248(92)90074-s
Popis:	We have investigated antimony as a p-type dopant for ZnTe grown by molecular beam epitaxy because of its low vapor pressure compared to other column V elements. We find maximum p-type carrier concentrations of 3×10 15 cm -3 in Sb-doped films, with approximately 0.1% of the dopant activated. The solubility of Sb in the films is limited to the low 10 18 cm -3 range, and there is no near-band-edge feature in the photoluminesence spectra associated with Sb.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::32c26008615ced1e117e98826b3db8ef https://doi.org/10.1016/0022-0248(92)90074-s Zobrazit plný text záznamu