Films of Ni-7 at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on
| Autor: | Thierry Caillat, J. P. Fleurial, E. Kolawa, T. Kacsich, M.-A. Nicolet |
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| Rok vydání: | 1998 |
| Předmět: |
Diffraction
Materials science Acoustics and Ultrasonics Annealing (metallurgy) Metallurgy Analytical chemistry chemistry.chemical_element Condensed Matter Physics Mass spectrometry Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metal chemistry visual_art visual_art.visual_art_medium |
| Zdroj: | Journal of Physics D: Applied Physics. 31:2406-2411 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/31/19/007 |
| Popis: | Films of Ni–7 at% V, Pt, Pd, and Ta40Si14N46, each approximately 100 nm thick, were magnetron-deposited and interposed between about 250 nm thick copper overlayers and Bi2Te3 single-crystalline substrates. The samples were then annealed in vacuum up to 350 degrees C. The performance of the metal and the tantalum-silicon-nitride films as diffusion barriers for in-diffusion of Cu and out-diffusion of Bi and Te was evaluated by 2.0 MeV 4He backscattering spectrometry and x-ray diffraction. The Ni–7 at% V, Pd and Pt films all fail to prevent interdiffusion of Cu and Bi2Te3 after a few hours of annealing at 200 degrees C. However, the Ta40Si14N46 barrier preserves the integrity of the contact after 250 degrees C for 50 h and 350 degrees C for 1 h anneals. These results confirm the superior characteristics of the metal-silicon-nitride films as diffusion barriers. |
| Databáze: | OpenAIRE |
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