| Autor: |
Jishen Zhang, Chengkuan Wang, Kaizhen Han, Chen Sun, Lye-Hing Chua, Haiwen Xu, Ying Wu, Xiao Gong, Wei Zou, Todd Henry |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Symposium on VLSI Technology. |
| DOI: |
10.23919/vlsit.2019.8776494 |
| Popis: |
A novel ladder transmission line method (LTLM) that features eliminated parasitic resistance from contact metal and access electrodes, simple fabrication process, and $2\times 10^{-10}\Omega-\text{cm}^{2}$ resolution for highly-accurate extraction of specific contact resistivity $(\rho_{c})$ in the $\sim 10^{-10}$ to 10−9 $\Omega-\text{cm}^{2}$ regime is demonstrated. The current distribution and extraction of $\rho_{c}\text{ln}$ LTLM are verified by TCAD and numerical distributive-resistor-network method, respectively. The extraction error caused by the current spreading and crowding in LTLM are modeled, and design guidelines to achieve 10−10 $\Omega-\text{cm}^{2}$ resolution for $\rho_{c}$ extraction are provided. By applying LTLM to the Ni/p+-Ge 0.95 Sn 0.05 contact, a record-low $\rho_{c}$ down to $4.0\pm 2.0\times 10^{-10}\Omega-\text{cm}^{2}$ was obtained. LTLM is insensitive to variation of metal resistance, unlike the refined TLM (RTLM) which could overestimate $\rho_{c}$ by at least tens of times. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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