| Autor: |
Morteza Abbasi, Torgil Kjellberg, Anton de Graauw, Edwin van der Heijden, Mattias Ferndahl, Herbert Zirath |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium. |
| DOI: |
10.1109/csics.2009.5315699 |
| Popis: |
This paper presents a power amplifier in 45nm CMOS technology operating in the 50 to 60-GHz frequency range. It uses a single-ended topology with two cascode stages. A gain of 19.6 dB is obtained at 54 GHz where the gain peaks, and 17 dB at 60 GHz. The measured output-referred 1-dB compression point is 8.7 dBm at 60 GHz and a supply voltage of 2.1 V, and the saturated output power is 13.5 dBm. The bias conditions are shown to be reliable through lifetime measurements. The active chip-area measures 160 mu m x 110 mu m. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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