A Device Model for Rb-Conditioned Chalcopyrite Solar Cells
| Autor: | Reiner Klenk, Hasan A. Yetkin, Christian A. Kaufmann, Rutger Schlatmann, Tobias Bertram, Alejandra Villanueva Tovar, Tim Kodalle |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Photocurrent Materials science Passivation Chalcopyrite Photovoltaic system Order (ring theory) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Temperature measurement Electronic Optical and Magnetic Materials visual_art 0103 physical sciences visual_art.visual_art_medium Electrical and Electronic Engineering Reference device 0210 nano-technology Deposition (law) |
| Zdroj: | IEEE Journal of Photovoltaics. 11:232-240 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2020.3033426 |
| Popis: | We present a comprehensive device model for Cu(In,Ga)Se $_{2}$ (CIGSe) thin-film solar cells based on numerical SCAPS-1D simulations. The model reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-free reference device, a sample that underwent an RbF-treatment, and a sample based on a CIGSe/RbInSe $_{2}$ -stack. According to this model, and in agreement with experimental findings, the main consequences of both Rb-conditionings are an increased doping-density and a defect passivation in the CIGSe as well as the formation of a photocurrent barrier at the hetero interface. With the numerical model established, fundamental aspects of the Rb-conditioning, e.g., the differentiation between its effect on bulk and interface recombination are discussed. Additionally, temperature dependent current-voltage analysis is employed in order to test the model's predictions regarding the interaction of Rb with an injection-current barrier at the back contact of the device. Both the simulation and the temperature dependent current-voltage measurements lead to the result that the RbF-PDT is increasing the height of this barrier, while the deposition of RbInSe $_{2}$ is decreasing it. |
| Databáze: | OpenAIRE |
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