High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE
| Autor: | J. Martínez-Juárez, F. de Anda-Salazar, V.H. Compeán-Jasso, F. Sánchez-Niño, V.A. Mishurnyi |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Annealing (metallurgy) Electrical junction Liquid phase 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences Optoelectronics Breakdown voltage 0210 nano-technology business Voltage |
| Zdroj: | Infrared Physics & Technology. 79:32-35 |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/j.infrared.2016.09.008 |
| Popis: | p-GaInAsSb/n-GaSb junction with breakdown voltages as high as 38 V and abrupt breakdown characteristic have been fabricated by Liquid Phase Epitaxy. To obtain these characteristics the structures have been submitted to annealing processes just after epitaxial growth. The diffusion of dopant from the n-GaSb substrate towards the epitaxial layer separates the electrical junction from the epitaxial interface and produces junctions with better inverse polarization behavior. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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