Inversion-Mode In0.53Ga0.47 As MOSFET with f T = 275 GHz and high V eff

Autor:	Jing-Yuan Wu, Ping Huang, Quang-Ho Luc, Hua-Lun Ko, Yung-Chun Chiang, Hsiang-Chan Yu, Nhan-Ai Tran, Mu-Yu Chen, Edward Yi Chang
Rok vydání:	2023
Předmět:	General Engineering General Physics and Astronomy
Zdroj:	Applied Physics Express. 16:041007
ISSN:	1882-0786 1882-0778
Popis:	In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the reported inversion-mode InGaAs MOSFETs. Meanwhile, peak transconductance (g m) shows 1035 (μS/μm). These extraordinary properties are attributed to the N2 remote plasma treatment which results in excellent high-k/III-V interface quality. With the assistance of delay-time analysis, effective electron velocity (V eff) of 2.88 × 107(cm s–1) is extracted for a possible explanation of the observed record f T performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::32734fdd3f3bd425a50ba7197f64e133 https://doi.org/10.35848/1882-0786/acccd4 Zobrazit plný text záznamu