Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases
| Autor: | Evangelos Gogolides, S. Grigoropoulos, A. G. Nassiopoulos |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Silicon
Analytical chemistry chemistry.chemical_element Nanotechnology Condensed Matter Physics Isotropic etching Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Ternary compound Etching (microfabrication) Fluorine Deep reactive-ion etching Dry etching Electrical and Electronic Engineering Reactive-ion etching |
| Zdroj: | Microelectronic Engineering. 27:449-452 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(94)00143-i |
| Popis: | Silicon reactive ion etching using a mixture of SF"6 and CHF"3 at room temperature was investigated. The etching characteristics as a function of gas composition, rf power, pressure and masking material as well as electrode material were studied. Highly anisotropic, vertical and with smooth surface silicon pillars, lines and trenches with aspect ratios as high as 25:1 with dimensions down to 50 nm were obtained |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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