High-power V-band AlInAs/GaInAs on InP HEMTs
| Autor: | Lawrence E. Larson, April S. Brown, Mehran Matloubian, L.D. Nguyen, M.A. Melendes, M.J. Delancey, M.A. Thompson, R.A. Rhodes, J.E. Pence, J. A. Henige |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
business.industry Transconductance Transistor Electrical engineering Gain compression High-electron-mobility transistor Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Power semiconductor device Field-effect transistor Electrical and Electronic Engineering business V band |
| Zdroj: | IEEE Electron Device Letters. 14:188-189 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.215155 |
| Popis: | The DC and RF performance of delta -doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450- mu m-wide device with a gate-length of 0.22 mu m has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMTs for high-power applications in addition to low-noise applications at V-band. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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