| Autor: |
Gang Wu, Qing Nan Zhao, Lei Wu, Deng Kui Miao |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Advanced Materials Research. :922-926 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.591-593.922 |
| Popis: |
Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film’s visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω•cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
