| Autor: |
O. Voegeli, L. F. Shew, D. M. Hannon, H. L. Hu, L. L. Rosier |
| Rok vydání: |
1975 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.30202 |
| Popis: |
One of the primary functions required for a bubble lattice device is the translation of the lattice for accessing information. This paper describes the results of a test device designed to study the translation of a bubble lattice. The design utilizes buffer regions at each end of the lattice. The buffer regions contain parallel stripe domains aligned along the direction in which the stripe domains aligned along the direction in which the lattice is translated. The lattice initialization procedure involves first applying an a.c. in‐plane field to form an array of parallel stripe domains. The stripe domains are then cut into bubble domains by conductor lines fabricated on the bubble material. The domains within the active area of the device are isolated from the domains in the surrounding area by selectively ion milling the garnet material. A 12 column X 28 row lattice was quasistatically translated by applying bipolar current pulses to pairs of conductor lines placed so as to provide a driving force on every fourth column of bubbles in the lattice. Using a 2.5 Oe peak, 1 MHz bias modulating field to minimize coercivity effects the minimum current required to translate the lattice was 3 mA which corresponds to a power dissipation in the condutor lines of 165 nW/bubble. The bias field operating margin at 3.5 mA was 10.5 Oe±25%. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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