Microstructure and Thermoelectric Properties of n- and p-Type Doped Mg2Sn Compounds Prepared by the Modified Bridgman Method
| Autor: | Nick Savvides, Haiyan Chen |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Scanning electron microscope Doping Analytical chemistry Condensed Matter Physics Thermoelectric materials Microstructure Electronic Optical and Magnetic Materials Crystallography Seebeck coefficient Thermoelectric effect Materials Chemistry Electrical and Electronic Engineering Ingot Eutectic system |
| Zdroj: | Journal of Electronic Materials. 38:1056-1060 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Mg2Sn compounds were prepared by the modified vertical Bridgman method, and were doped with Bi and Ag to obtain n- and p-type materials, respectively. Excess Mg was also added to some of the ingots to compensate for the loss of Mg during the preparation process. The Mg2Sn samples were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM), and their power factors were calculated from the Seebeck coefficient and electrical conductivity, measured from 80 K to 700 K. The sample prepared with 4% excess Mg, which contains a small amount of Mg2Sn + Mg eutectic phase, had the highest power factor of 12 × 10−3 W m−1 K−2 at 115 K, while the sample doped with 2% Ag, in which a small amount of eutectics also exists, has a power factor of 4 × 10−3 W m−1 K−2 at 420 K. |
| Databáze: | OpenAIRE |
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