Estimation of the ultimate efficiency of a three-pin solar cell based on the GaAs/Si heterostructure
| Autor: | D. M. Legan, E. G. Tishkovskii, D. O. Kuznetsov |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Computer simulation business.industry Non-equilibrium thermodynamics Heterojunction Condensed Matter Physics Laser law.invention Condensed Matter::Materials Science law Solar cell Optoelectronics Charge carrier Electrical and Electronic Engineering Photonics business Instrumentation Layer (electronics) |
| Zdroj: | Optoelectronics, Instrumentation and Data Processing. 47:482-484 |
| ISSN: | 1934-7944 8756-6990 |
| DOI: | 10.3103/s8756699011050293 |
| Popis: | The ultimate efficiency of a three-pin solar cell based on the GaAs/Si structure is calculated by means of numerical simulation in a diffusion-drift approximation. Dependences of the efficiency on the GaAs layer thickness and the density of dislocations threading in this layer, which are known to affect the lifetime of nonequilibrium charge carriers. It is shown that the maximum limit efficiency (27%) of such a structure is reached at the GaAs layer thickness of about 1.4 µm and the density of threading dislocations of less than 106 cm−2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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