Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 1014 cm-3) 4H-SiC Epilayers
| Autor: | Akira Bandoh, Fukada Keisuke, Hiroshi Osawa, Yoshihiko Miyasaka, Ishibashi Naoto, Kenji Momose |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Doping Analytical chemistry High voltage 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology |
| Zdroj: | Materials Science Forum. 897:83-86 |
| ISSN: | 1662-9752 |
| Popis: | The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (< 4 × 1014 cm-3) 4H-SiC epilayers grown by chemical vapor deposition (CVD) were investigated. The variation in doping concentration during epitaxial growth are considered to be caused by: (1) variation in gas flow due to parasitic deposition, (2) variation in precursor decomposition rate due to change in reactor temperature, (3) variation in dopant incorporation rate due to change in wafer temperature, and (4) variation in supply of background dopants. By controlling all these parameters, a constant depth profile in thick (> 100um) epilayers was realized. |
| Databáze: | OpenAIRE |
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