Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications

Autor:	Weimin Li, Jim Ricker, Tyler Lowrey, J. Reed, Chuck Dennison, Regino Sandoval, Jeff Roeder, Jeffery Fournier, Chongying Xu, Guy C. Wicker, Wally Czubatyj, Carl Schell, Stephen J. Hudgens, William Hunks, Phil Chen, Jun-Fei Zheng, Smuruthi Kamepalli, Matthias Stender
Rok vydání:	2009
Předmět:	Materials science Hybrid physical-chemical vapor deposition business.industry Annealing (metallurgy) Nanotechnology Combustion chemical vapor deposition GeSbTe Amorphous solid chemistry.chemical_compound chemistry Optoelectronics Crystallite Metalorganic vapour phase epitaxy Thin film business
Zdroj:	MRS Proceedings. 1160
ISSN:	1946-4274 0272-9172
Popis:	We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposition. GeSbTe films adhere well to SiO2, TiN, and TiAlN. The morphology and adhesion are stable in 420°C post process. By annealing at 365°C, amorphous GeSbTe films converted into crystalline GeSbTe with polycrystalline grain sizes of 5nm. Film resistivity in the crystalline phase ranged from 0.001 to 0.1 Ω-cm, suitable for device applications. Phase change devices fabricated with confined via structures filled with MOCVD GeSbTe showed cycle endurances up to 1×1010 with a dynamic set/rest resistance of two orders of magnitude.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::324f69b10eb11a49f55d1e3ecfd59c1a https://doi.org/10.1557/proc-1160-h14-11 Zobrazit plný text záznamu Full text from SpringerLink