SiO2 deposition as a byproduct of SF6 plasma in an electron cyclotron resonance reactor

Autor:	W.J. Varhue, A.J. Watts, M. Gibson
Rok vydání:	1992
Předmět:	Chemistry Metals and Alloys Analytical chemistry Surfaces and Interfaces Plasma Dielectric Electron spectroscopy Electron cyclotron resonance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Materials Chemistry Deposition (phase transition) Plasma processing Quartz Microwave
Zdroj:	Thin Solid Films. 220:55-58
ISSN:	0040-6090
DOI:	10.1016/0040-6090(92)90548-p
Popis:	Electron cyclotron resonance has been used for a variety of plasma processes. The technique requires a dielectric window through which microwave power is delivered to the discharge. The choice of dielectric material is critical because it can impact the plasma characteristics and process results. In a reactor with a quartz microwave window, an SF6 plasma can etch the quartz window and redeposit SiO2 on the substrate. This deposition has been characterized by electron spectroscopy for chemical analysis and the plasma stream analyzed to determine the deposition mechanism. It was found that the quartz etch product SiF4 reacts with residual water in the vacuum system to produce the SiO2 deposition. This deposition and its passivating effect can be prevented by replacing the quartz window with alumina.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::324ada8c6de1126ff1f3beb51edb7ee6 https://doi.org/10.1016/0040-6090(92)90548-p Zobrazit plný text záznamu