Structural and electronic properties of graphite layers grown on SiC(0001)
| Autor: | R.C.G. Leckey, Florian Speck, Anton Tadich, J.D. Riley, Konstantin V. Emtsev, L. Broekman, Andrei Varykhalov, Alexander M. Shikin, Th. Seyller, Lothar Ley, Kun Yuan Gao, Oliver Rader |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Schottky barrier Analytical chemistry Angle-resolved photoemission spectroscopy Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Scanning probe microscopy chemistry X-ray photoelectron spectroscopy Electron diffraction Materials Chemistry Silicon carbide Graphite Electronic band structure |
| Zdroj: | Surface Science. 600:3906-3911 |
| ISSN: | 0039-6028 |
| Popis: | Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ϕ B , n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate. |
| Databáze: | OpenAIRE |
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