Stress-Induced Redistribution of Point Defects in Silicon Device Structures

Autor:	T.E. Harrington, William R. Frensley, I.V. Peidous, K.V. Loiko
Rok vydání:	2001
Předmět:	Materials science Silicon chemistry Condensed matter physics Vacancy defect Stress induced Frenkel defect chemistry.chemical_element General Materials Science Redistribution (chemistry) Condensed Matter Physics Crystallographic defect Atomic and Molecular Physics and Optics
Zdroj:	Solid State Phenomena. :225-230
ISSN:	1662-9779
DOI:	10.4028/www.scientific.net/ssp.82-84.225
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3244a1ee509a43b1f38f2b3f4e58fd0b https://doi.org/10.4028/www.scientific.net/ssp.82-84.225 Zobrazit plný text záznamu