GaAs structures for X-ray imaging detectors

Autor:	E. P. Drugova, L.P. Porokhovnichenko, O.B. Koretskaya, A.I. Potapov, D.L. Budnitsky, V.P. Germogenov, N.N. Bakin, L.S. Okaevich, A. V. Tyazhev, S.S. Khludkov, A.P. Vorobiev, G.I. Ayzenshtat, Kevin M. Smith, O.P. Tolbanov, M. D. Vilisova
Rok vydání:	2001
Předmět:	Physics Nuclear and High Energy Physics Fabrication business.industry Detector Epitaxy Particle detector Semiconductor detector Diffusion process Measuring instrument Optoelectronics business Instrumentation Layer (electronics)
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:25-32
ISSN:	0168-9002
Popis:	A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high-resistive layers, their electrophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of technological methods are analyzed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3242b68fad96e852ca7a9a0fc8a65973 https://doi.org/10.1016/s0168-9002(01)00820-8 Zobrazit plný text záznamu Full Text from ScienceDirect