A Study on Hot Carrier Reliability of Radiation Hardened H-gate PD SOI NMOSFET after Gamma Radiation
| Autor: | Xuefeng Yu, Qiwen Zheng, Jinghao Zhao, Hang Zhou, Qi Guo, Jiangwei Cui |
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| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | International Journal of Materials, Mechanics and Manufacturing. 7:100-104 |
| ISSN: | 1793-8198 |
| DOI: | 10.18178/ijmmm.2019.7.2.439 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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