High-power single-transverse-mode ridge optical waveguide semiconductor lasers
| Autor: | Mikhail B Uspenskii, A. V. Simakov, Evgeniya I Davydova, V V Popovichev, A. A. Sratonnikov, S. A. Plisyuk, Aleksandr A Marmalyuk, A E Drakin, A. A. Chel'nyi, Alexandr P Bogatov |
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| Rok vydání: | 2002 |
| Předmět: |
Diffraction
Brightness Materials science business.industry Physics::Optics Statistical and Nonlinear Physics Semiconductor device Laser Waveguide (optics) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Transverse mode Semiconductor laser theory Optics law Coincident Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Quantum Electronics. 32:1099-1104 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe2002v032n12abeh002352 |
| Popis: | More than 200 mW of a single-transverse-mode cw output power is produced from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. The laser-beam divergence is close to the diffraction limit and its brightness exceeds 5 × 107 W cm-2 sr-1. The calculated and experimental parameters of the laser beam are coincident with a high accuracy, which allows their reliable simulation. |
| Databáze: | OpenAIRE |
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