| Autor: |
G. Pubanz, S. Park, S. Diamond, S.J. Prasad, I. Beers, Agoston Agoston, S. Sanielevici, C. Haynes, John Ebner, B. Vetanen |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
[1991] GaAs IC Symposium Technical Digest. |
| DOI: |
10.1109/gaas.1991.172649 |
| Popis: |
A non-self-aligned HBT (heterojunction bipolar transistor) IC process with f/sub T/ and f/sub max/ of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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