Rapid thermal annealing of high dose arsenic-implanted silicon
| Autor: | R. Kögler, G. Otto, P. Knothe, E. Wieser |
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| Rok vydání: | 1990 |
| Předmět: |
inorganic chemicals
integumentary system Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) Kinetics General Engineering Analytical chemistry chemistry.chemical_element General Chemistry Fick's laws of diffusion Ion implantation chemistry Hall effect General Materials Science Tempering Arsenic |
| Zdroj: | Applied Physics A Solids and Surfaces. 51:53-59 |
| ISSN: | 1432-0630 0721-7250 |
| DOI: | 10.1007/bf00324465 |
| Popis: | A model for rapid thermal annealing of high dose arsenic-implanted silicon layers is proposed. The kinetics of arsenic clustering was taken into account. Assuming that all arsenic is initially electrically active, the clustering rate is found to be enhanced during the early stage of annealing in comparison with results reported for conventional furnace tempering [1]. An influence of a low temperature preannealing on the diffusion behaviour of arsenic has not been observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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