Low-temperature annealing behavior of iron-related deep levels in n-type silicon wafers
| Autor: | Kazunari Kurita, Noritomo Mitsugi, Ayumi Onaka-Masada, Takeshi Kadono |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Silicon Deep level Chemistry Annealing (metallurgy) N type silicon General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 0103 physical sciences Thermal Wafer Atomic physics 0210 nano-technology Transient spectroscopy |
| Zdroj: | Japanese Journal of Applied Physics. 55:021301 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | The iron-related deep levels in n-type silicon and their thermal stabilities were investigated by deep-level transient spectroscopy (DLTS). Three deep energy levels at E c − 0.35, E c − 0.41, and E c − 0.48 eV were observed and classified into two types from the annealing behavior at room temperature and a low temperature of 200 °C. We found for the first time that only one iron-related deep level at E c − 0.35 eV was highly stable at room temperature and 200 °C, while other iron-related deep levels were unstable. We also found that the concentration of the deep energy level at E c − 0.41 eV gradually decreased at room temperature. These results suggest that the origin of the thermally stable level at E c − 0.35 eV is attributed to the substitutional iron-related level, and those of the thermally unstable levels at E c − 0.41 and E c − 0.48 eV are attributed to interstitial iron-related complexes such as iron-acceptor pairs in p-type silicon. |
| Databáze: | OpenAIRE |
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