Numerical analysis on the LDMOS with a double epi-layer and trench electrodes

Autor:	J.-S Choi, Sang-Koo Chung, Y.-I Choi, Min-Koo Han, Han-Jo Lim, I.-Y Park, S.-I Mo
Rok vydání:	2001
Předmět:	LDMOS Materials science business.industry Numerical analysis General Engineering Electrical engineering Epitaxy MOSFET Trench Electrode Breakdown voltage Optoelectronics business Layer (electronics)
Zdroj:	Microelectronics Journal. 32:497-502
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(01)00021-0
Popis:	We proposed a new lateral double-diffused MOS (LDMOS) structure employing a double p/n epitaxial layer, which is formed on p− substrates. Trenched gate and drain are also employed to obtain uniform and high drift current density. The breakdown voltage and the specific on-resistance of the proposed LDMOS are numerically calculated by using a two-dimensional (2D) device simulator, Medici . The n− drift region and upper p− region of the proposed LDMOS are fully depleted in off-states employing the RESURF technique. The simulation results show that the breakdown voltage is 142 V and specific on-resistance is 183 mΩ mm2 when the cell pitch of the LDMOS is 7.5 μm. The proposed LDMOS shows better trade-off characteristics than the previous results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::321dd2b7618cbe1d5048e39622a6dba8 https://doi.org/10.1016/s0026-2692(01)00021-0 Full Text from ScienceDirect