Dielectric relaxation behavior and conduction mechanism of Te46As32Ge10Si12 films
| Autor: | N.A. Hegab, H.E. Atyia |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength Condensed matter physics Relaxation (NMR) 02 engineering and technology Dielectric Conductivity 021001 nanoscience & nanotechnology Polaron 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Dielectric spectroscopy 0103 physical sciences Dielectric loss Electrical and Electronic Engineering 0210 nano-technology Cole–Cole equation |
| Zdroj: | Optik. 127:6232-6242 |
| ISSN: | 0030-4026 |
| Popis: | Alternating current conductivity and dielectric properties measurements have been performed on the Te 46 As 32 Ge 10 Si 12 amorphous films at frequency and temperature ranges (0.1–100 kHz)and (303–383 K) respectively. The ac conductivities were analyzed by considering a power relation σ ac αω s (s ≤ 1). Ac conductivity and its frequency exponent have been analyzed in the framework of various theoretical models. The non-overlapping small polaron tunneling model is found the suitable model to describe the conduction mechanism for the present glassy films. The presence of the dielectric loss peaks shift to higher frequency with increasing temperature indicate the characteristics feature of Debye-type relaxation process with strong polydispersion nature of the dielectric relaxation. The temperature dependence of the relaxation time yields the activation energy of relaxation (0.119 eV). The distribution of the relaxation time is confirmed by Cole–Cole plots. Some parameters like optical dielectric constant, static dielectric constant, macroscopic relaxation time, molecular relaxation time and dielectric strength have been estimated from Cole–Cole diagrams and studied as a function of temperature. |
| Databáze: | OpenAIRE |
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