Characteristics of gold/cadmium sulfide nanowire Schottky diodes
| Autor: | Sai Guduru, Ingrid St. Omer, Suresh Rajaputra, Vijay P. Singh, Shounak Mishra, Raghu Mangu |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Anodizing Metals and Alloys Nanowire Schottky diode Nanotechnology Surfaces and Interfaces Cadmium sulfide Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Nanoelectronics chemistry Saturation current Materials Chemistry Optoelectronics business Quantum tunnelling Diode |
| Zdroj: | Thin Solid Films. 518:1809-1814 |
| ISSN: | 0040-6090 |
| Popis: | Schottky diode junctions were formed between nanowires of cadmium sulfide and nanowires of gold, through sequential cathodic electrodeposition into the pores of anodized aluminum oxide (AAO) templates. Lengths of CdS and Au nanowires were 100–500 nm and 300–400 nm respectively, while the diameter was 30 nm, each. Analysis of Schottky diodes yielded an effective reverse saturation current (Jo), of 0.32 mA/cm2 and an effective diode ideality factor (A) of 8.1 in the dark. Corresponding values under one sun illumination were, Jo = 0.92 mA/cm2 and A = 10.0. Dominant junction current mechanisms are thought to be tunneling and/or interface state recombination. |
| Databáze: | OpenAIRE |
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