| Autor: |
Pengkun Sun, Jianshuo Zhou, Donglai Zhong, Lin Xu, Zhiyong Zhang, Li Fang, Li Ding, Jie Han, Lian-Mao Peng, Lijun Liu, Huiwen Shi, Hui Wang |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Nature Electronics. 4:405-415 |
| ISSN: |
2520-1131 |
| DOI: |
10.1038/s41928-021-00594-w |
| Popis: |
The development of next-generation wireless communication technology requires integrated radiofrequency devices capable of operating at frequencies greater than 90 GHz. Carbon nanotube field-effect transistors are promising for such applications, but key performance metrics, including operating frequency, at present fall below theoretical predictions. Here we report radiofrequency transistors based on high-purity carbon nanotube arrays that are fabricated using a double-dispersion sorting and binary liquid interface aligning process. The nanotube arrays exhibit a density of approximately 120 nanotubes per micrometre, a maximum carrier mobility of 1,580 cm2 V−1 s−1 and a saturation velocity of up to 3.0 × 107 cm s−1. The resulting field-effect transistors offer high d.c. performance (on-state current of 1.92 mA µm−1 and peak transconductance of 1.40 mS μm−1 at a bias of −0.9 V) for operation at millimetre-wave and terahertz frequencies. Transistors with a 50 nm gate length show current-gain and power-gain cutoff frequencies of up to 540 and 306 GHz, respectively, and radiofrequency amplifiers can exhibit a high power gain (23.2 dB) and inherent linearity (31.2 dBm output power of the third-order intercept point) in the K-band (18 GHz). Transistors based on arrays of aligned carbon nanotubes can exhibit cutoff frequencies of up to 540 GHz, and could be further scaled for operation at millimetre-wave and terahertz frequencies. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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