| Autor: |
A. Maallemi, Y. Belkacem, Y. Boukennous, A. Cheriet, K. Bourenane, Aissa Keffous, W. Chergui, M. Siad, Hamid Menari |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
Vacuum. 80:908-913 |
| ISSN: |
0042-207X |
| DOI: |
10.1016/j.vacuum.2005.12.001 |
| Popis: |
In this paper we describe the fabrication of a conventional lithium compensated silicon detector (Si(Li)) realized on Topsil silicon with bulk resistivity 0.9 to 3 k Ω cm , using the process of ion drift introduced by Pell. Preliminary results of electrical and nuclear characterization are shown. A leakage current value of 4 pA is obtained under reverse bias voltage of + 500 V , at pressure of 5 . 10 - 6 Torr and 113 K. An alpha test using triple source 241 Am, 239 Pu, 233 U was carried and a resolution on 241 Am peak around 42 keV was obtained with this type of detector. The fabricated detector present a good electrical and nuclear characteristics that can be used in X-ray spectrometry and widespread applications in research science, environment monitoring and natural radioactivity. The main contribution of this work is the demonstration of an easy-to-implement, low cost detector set that can be achieved with an inexpensive n + p diode. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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