Characteristics and reliabilities on the Dicing before Grinding (DBG) process in nMOSFETs
| Autor: | Hsien-Chin Chiu, Li-Chun Chang, Hsuan-Ling Kao, Chih-Sheng Yeh, Meng-Ting Chen |
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| Rok vydání: | 2013 |
| Předmět: |
Static bending
Materials science Strain (chemistry) business.industry Gate length Structural engineering Tensile strain Condensed Matter Physics Hot carrier stress Electronic Optical and Magnetic Materials Grinding Reliability (semiconductor) Materials Chemistry Wafer dicing Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 79:111-116 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2012.07.012 |
| Popis: | This paper reports the characteristics and reliability of nMOSFETs using the DBG process under mechanical tensile strain. Under a 0.075% longitudinal tensile strain, the increment rates of I d,sat are 6.55% and 3.51% for 1 μm and 0.135 μm nMOSFET. The increment rate of I d,sat is decreased and saturated, when the gate length is in the sub-micron region. Good fatigue properties and reliability are obtained after dynamic, static bending strain and hot carrier stress under a 0.075% longitudinal tensile strain. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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