Theory of sulfur-vacancy defect in diamond: a comparable NV−1 isoelectronic center
| Autor: | Guanxiao Cheng, L. T. Yan, Hefei Huang, Qingzhong Huang, Y.H. Shen |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
chemistry.chemical_element Diamond 02 engineering and technology Electronic structure engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Vacancy defect 0103 physical sciences engineering Center (algebra and category theory) Electrical and Electronic Engineering Atomic physics 010306 general physics 0210 nano-technology Spin (physics) Nitrogen-vacancy center Hyperfine structure Carbon |
| Zdroj: | Optik. 136:151-156 |
| ISSN: | 0030-4026 |
| DOI: | 10.1016/j.ijleo.2017.02.027 |
| Popis: | A color center in diamond which is a comparable NV −1 isoelectronic center is predicted based on first-principles electronic structure calculations. The defect consists of a substitutional sulfur and an adjacent carbon vacancy (S-V). We find that the S-V center is optically accessible with two zero-phonon line of about 1.12 and 1.22 eV. The S-V center also shares many of the characteristics of the NV −1 center in diamond. A prominent spin coherence time is predicted by combining first-principles calculations and a mean-field theory for spin hyperfine interaction, and is at the same level with that of NV −1 center in diamond. Furthermore, the neutral S-V center in diamond provides more degrees of freedom for spin manipulation than the NV −1 center in diamond. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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