Study of hydrogenated AlN as an anti-reflective coating and for the effective surface passivation of silicon
| Autor: | Winfried Wolke, Ralf Preu, Jochen Rentsch, Georg Krugel, Aashish Sharma |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Passivation Silicon business.industry chemistry.chemical_element Nanotechnology Nitride Condensed Matter Physics law.invention chemistry.chemical_compound Anti-reflective coating Silicon nitride chemistry Photovoltaics law Ellipsometry Aluminium Optoelectronics General Materials Science business |
| Zdroj: | physica status solidi (RRL) - Rapid Research Letters. 7:457-460 |
| ISSN: | 1862-6254 |
| DOI: | 10.1002/pssr.201307153 |
| Popis: | Stacks of aluminum oxide and silicon nitride are frequently used in silicon photovoltaics. In this Letter, we demonstrate that hydrogenated aluminum nitride can be an alternative to this dual-layer stack. Deposited on 1 Ω cm p-type FZ silicon, very low effective surface recombination velocities of 8 cm/s could be reached after firing at 820 °C. This excellent passivation is traced back to a high density of fixed charges at the interface of approximately –1 × 1012 cm–2 and a very low interface defect density below 5 × 1010 eV–1 cm–2. Furthermore, spectral ellipsometry measurements reveal that these aluminum nitride layers have ideal optical properties for use as anti-reflective coatings. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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