Reduction of GaAs metal–semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth

Autor:	W. R. Hitchens, P. E. Brunemeier, D. M. Dobkin
Rok vydání:	1989
Předmět:	Materials science Ozone Fabrication business.industry General Engineering Integrated circuit medicine.disease_cause Epitaxy law.invention chemistry.chemical_compound chemistry law medicine Optoelectronics Field-effect transistor MESFET business Ultraviolet Molecular beam epitaxy
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:680
ISSN:	0734-211X
DOI:	10.1116/1.584625
Popis:	This work demonstrates that UV‐ozone cleaning of substrates prior to molecular‐beam epitaxial growth, which has been shown by other workers to remove carbon contamination, is effective in suppressing sidegating problems otherwise encountered in GaAs metal–semiconductor field effect transistors fabricated on the epitaxial layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::31e5cf89606f4a63f54432aa08f60c4d https://doi.org/10.1116/1.584625 Zobrazit plný text záznamu