Exciton localization due to isoelectronic substitution in ZnSTe
| Autor: | Xudong Yang, Baoquan Sun, Zuyan Xu, W. K. Ge, Iam Keong Sou, Zhenhua Sun, Guobao Li, Yuexia Ji |
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| Rok vydání: | 2007 |
| Předmět: |
Range (particle radiation)
Photoluminescence Condensed Matter::Other Chemistry Exciton Biophysics General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Biochemistry Atomic and Molecular Physics and Optics Condensed Matter::Materials Science Spontaneous emission Atomic physics |
| Zdroj: | Journal of Luminescence. :402-404 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2006.01.158 |
| Popis: | We have systematically investigated the optical properties of isoelectronic centers (IECs) of ZnSTe in the whole composition range from ZnS to ZnTe. In the S-rich ZnSTe photoluminescence is dominated by Te-bound excitons, while in Te-rich side, S-related bound exciton emission dominates the radiative recombination. Localization nature of IEC bound exciton emissions in both S-rich and Te-rich side ZnSTe alloys are studied in detail. (c) 2006 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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