Highly performant FDSOI pMOSFETs with metallic source/drain

Autor:	V. Carron, Bernard Previtali, V. Balan, S. Descombes, Maurice Rivoire, O. Cueto, Simon Deleonibus, L. Baud, Yves Morand, O. Faynot, M. Vinet, Thierry Poiroux, F. Nemouchi, L. Tosti
Rok vydání:	2009
Předmět:	Materials science Silicon business.industry Gate length Electrical engineering Silicon on insulator chemistry.chemical_element Metal chemistry visual_art Logic gate MOSFET visual_art.visual_art_medium Optoelectronics Mosfet circuits business
Zdroj:	2009 International Symposium on VLSI Technology, Systems, and Applications.
DOI:	10.1109/vtsa.2009.5159304
Popis:	We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345µA/µm and Ioff=30nA/µm at −1V for a 50nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow specifific contact resistivities as low as 0.1 Ω.µm2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::31d5b31f8da798a2fac76a321cf8c265 https://doi.org/10.1109/vtsa.2009.5159304 Zobrazit plný text záznamu