Preparation and characterization of transparent ZnO thin films obtained by spray pyrolysis
| Autor: | Francisco de Paula Martín Jiménez, JOSE RAMOS-BARRADO, MARIA MERCEDES GABAS PEREZ, Dietmar Leinen, RACHID AYOUCHI |
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| Rok vydání: | 2003 |
| Předmět: |
business.industry
Chemistry Band gap Schottky barrier Metals and Alloys Analytical chemistry Surfaces and Interfaces Space charge Surfaces Coatings and Films Electronic Optical and Magnetic Materials Field electron emission Optics Band bending Depletion region Materials Chemistry Charge carrier Thin film business |
| Zdroj: | Thin Solid Films. 426:68-77 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(02)01331-7 |
| Popis: | b ´´ Abstract Structural, optical, chemical and electrical properties of thin films of ZnO obtained by spray pyrolysis over Pt or silica substrates are determined at temperature ranges between 223 and 373 K. The thin films are pure ZnO with a preferred crystalline orientation of ( 002 ). Grain-boundary barriers are created by the band bending and the mobility of charge carriers is limited by the thermal field emission of electrons at the grain-boundary barriers. The density of ionized acceptor atoms and the width of the space charge, both obtained from the capacitance-voltage (C-V) method, are consistent with the theory of the depletion layer in the Schottky barrier device. The density of states of defect, obtained from admittance spectroscopy, only presents a maximum at approximately 0.44 eV, whose position in the band gap does not change under bias. 2002 Elsevier Science B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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